Id 11 a feature new revolutionary high voltage technology ultra low gate charge. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical. Spa11n60c3 datasheet, spa11n60c3 pdf, spa11n60c3 data sheet, spa11n60c3 manual, spa11n60c3 pdf, spa11n60c3, datenblatt, electronics spa11n60c3, alldatasheet, free. Pricing and availability on millions of electronic components from digikey electronics.
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Triacs bt9 series thermal resistances symbol parameter conditions min. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Mosvi 2sk4111 switching regulator applications low drainsource on resistance. May 19, 2016 15n60c3 datasheet 650v, mos power transistor infineon, spp15n60c3 datasheet, 15n60c3 pdf, 15n60c3 pinout, 15n60c3 manual, 15n60c3 schematic. K absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 12 a drain current continuous id 12 a pulsed note 2 idm 48 a avalanche energy. If its not shown correctly, click here to open the file on a separate window. Id 11 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dvdt rated high peak current capability improved transconductance pgto262 pgto220fp pgto220 marking 11n65c3 11n65c3. Ssp2n60bsss2n60b ssp2n60bsss2n60b 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. The insulatedgate fieldeffect transistor igfet, also known as the metal oxide field effect transistor mosfet, is a derivative of the field effect. Fcp11n60fcpf11n60 tm fcp11n60fcpf11n60 general description superfettm is a new generation of high voltage mosfets from fairchild with outstanding low onresistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms.